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| SI1563EDH New Product Vishay Siliconix Complementary 20-V (D-S) Low-Threshold MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 FEATURES rDS(on) (W) 0.280 @ VGS = 4.5 V 0.360 @ VGS = 2.5 V 0.450 @ VGS = 1.8 V 0.490 @ VGS = -4.5 V ID (A) 1.28 1.13 1.00 -1.00 -0.81 -0.67 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Level Switch P-Channel -20 0.750 @ VGS = -2.5 V 1.10 @ VGS = -1.8 V SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code EA G1 2 5 G2 XX YY G1 Lot Traceability and Date Code Part # Code 1 kW D1 S2 G2 3 kW D2 3 4 S2 N-Channel Top View S1 P-Channel D2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID IDM IS 0.61 0.74 0.38 P-Channel 5 secs Steady State -20 "12 V -0.88 -0.63 -3.0 A -0.48 0.57 0.3 W _C Symbol VDS VGS 5 secs Steady State 20 "12 Unit 1.28 0.92 4.0 1.13 0.81 -1.00 -0.72 0.48 0.57 0.30 -55 to 150 -0.61 0.30 0.16 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71416 S-03943--Rev. B, 21-May-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 130 170 80 Maximum 170 220 100 Unit _C/W C/W 1 SI1563EDH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 100 mA VDS = VGS, ID = -100 mA VDS = 0 V, VGS = "4.5 V " Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V " VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V, TJ = 85_C VDS = -16 V, VGS = 0 V, TJ = 85_C On-State Drain Currenta VDS w 5 V, VGS = 4.5 V ID(on) VDS p -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 1.13 A VGS = -4.5 V, ID = -0.88 A Drain-Source On-State Resistancea VGS = 2.5 V, ID = 0.99 A rDS(on) VGS = -2.5 V, ID = -0.71 A VGS = 1.8 V, ID = 0.20 A VGS = -1.8 V, ID = -0.20 A Forward Transconductancea VDS = 10 V, ID = 1.13 A gfs VDS = -10 V, ID = -0.88 A IS = 0.48 A, VGS = 0 V VSD IS = -0.48 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 2 -2 0.220 0.400 0.281 0.610 0.344 0.850 2.6 1.5 0.8 -0.8 1.2 -1.2 V S 0.280 0.490 0.360 0.750 0.450 1.10 W A 0.45 V -0.45 "1 "1 "10 "10 1 -1 5 -5 mA m mA mA m Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb N-Ch Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 1.13 A Gate-Source Charge Qgs P-Channel VDS = -10 V, VGS = -4.5 V, ID = -0.88 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time td(on) N-Channel VDD = 10 V, RL = 20 W ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = -10 V, RL = 20 W ID ^ -0.5 A, VGEN = -4.5 V, RG = 6 W P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time tf P-Ch 0.65 1.2 0.2 nC 0.3 0.23 0.3 45 150 85 480 350 840 210 850 70 230 130 720 530 1200 320 1200 ns 1.0 1.8 Gate-Drain Charge Qgd Rise Time tr Turn-Off Delay Time td(off) Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71416 S-03943--Rev. B, 21-May-01 SI1563EDH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 10 10,000 1,000 I GSS - Gate Current (mA) 8 I GSS - Gate Current (mA) 100 10 1 0.1 TJ = 25_C 0.01 0 0 4 8 12 16 0.001 0 3 6 9 12 15 Vishay Siliconix N-CHANNEL Gate Current vs. Gate-Source Voltage 6 TJ = 150_C 4 2 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 2.0 VGS = 5 thru 2 V 2.0 Transfer Characteristics TC = -55_C 1.5 I D - Drain Current (A) 25_C 1.5 I D - Drain Current (A) 1.5 V 125_C 1.0 1.0 0.5 1V 0.0 0 1 2 3 4 0.5 0.0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 140 120 C - Capacitance (pF) 100 Capacitance r DS(on) - On-Resistance ( W ) 0.5 0.4 VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V Ciss 80 60 40 Coss 20 0 Crss 0.3 0.2 0.1 0.0 0.0 0.5 1.0 ID - Drain Current (A) 1.5 2.0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Document Number: 71416 S-03943--Rev. B, 21-May-01 www.vishay.com 3 SI1563EDH Vishay Siliconix New Product N-CHANNEL On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 1.28 A VGS = 4.5 V ID = 1.13 A TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 5 V GS - Gate-to-Source Voltage (V) 3 r DS(on) - On-Resistance (W) (Normalized) 0.6 0.9 1.2 1.5 4 1.4 1.2 2 1.0 1 0.8 0 0.0 0.3 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 2 TJ = 150_C r DS(on) - On-Resistance ( W ) 1 I S - Source Current (A) 0.6 On-Resistance vs. Gate-to-Source Voltage 0.5 0.4 ID = 1.13 A 0.3 TJ = 25_C 0.2 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.2 ID = 100 mA 5 Single Pulse Power, Junction-to-Ambient 0.1 V GS(th) Variance (V) 4 -0.0 Power (W) 3 -0.1 2 -0.2 1 -0.3 -0.4 -50 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) www.vishay.com 4 Document Number: 71416 S-03943--Rev. B, 21-May-01 SI1563EDH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix N-CHANNEL 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 2. Per Unit Base = RthJA = 170_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 8 10,000 1,000 I GSS - Gate Current (mA) 6 I GSS - Gate Current (mA) 100 10 1 0.1 TJ = 25_C 0.01 0 0 8 12 VGS - Gate-to-Source Voltage (V) 4 16 0.001 0 TJ = 150_C P-CHANNEL Gate Current vs. Gate-Source Voltage 4 2 3 6 9 12 VGS - Gate-to-Source Voltage (V) 15 Document Number: 71416 S-03943--Rev. B, 21-May-01 www.vishay.com 5 SI1563EDH Vishay Siliconix New Product P-CHANNEL Transfer Characteristics 3.0 3V TC = -55_C 25_C 2.0 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 3.0 VGS = 5 thru 3 .5V 2.5 2.5 I D - Drain Current (A) 2.0 1.5 2V 1.0 1.5 V 1V 0.0 0 1 2 3 4 I D - Drain Current (A) 2.5 V 1.5 125_C 1.0 0.5 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.6 VGS = 1.8 V C - Capacitance (pF) 1.2 120 160 Capacitance r DS(on) - On-Resistance ( W ) Ciss VGS = 2.5 V 0.8 80 VGS = 4.5 V 0.4 40 Crss Coss 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 1 A 1.6 On-Resistance vs. Junction Temperature 3 r DS(on) - On-Resistance (W) (Normalized) 4 1.4 VGS = 4.5 V ID = 0.88 A 1.2 2 1.0 1 0.8 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) www.vishay.com 6 Document Number: 71416 S-03943--Rev. B, 21-May-01 SI1563EDH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 2 1.6 Vishay Siliconix P-CHANNEL On-Resistance vs. Gate-to-Source Voltage 1 I S - Source Current (A) r DS(on) - On-Resistance ( W ) TJ = 150_C 1.2 ID = 0.88 A 0.8 TJ = 25_C 0.4 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.30 0.25 0.20 V GS(th) Variance (V) 0.15 0.10 0.05 -0.00 -0.05 -0.10 -0.15 -50 0 0.01 1 Power (W) 3 ID = 100 mA 5 Single Pulse Power, Junction-to-Ambient 4 2 -25 0 25 50 75 100 125 150 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 2. Per Unit Base = RthJA = 170_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Document Number: 71416 S-03943--Rev. B, 21-May-01 www.vishay.com 7 SI1563EDH Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 8 Document Number: 71416 S-03943--Rev. B, 21-May-01 This datasheet has been download from: www..com Datasheets for electronics components. |
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